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Non-pressure sintered silicon carbide granulation powder
Non-pressure sintered silicon carbide granulation powder
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  • Non-pressure sintered silicon carbide granulation powder
  • Non-pressure sintered silicon carbide granulation powder

Non-pressure sintered silicon carbide granulation powder


Silicon carbide for pressureless sintering is produced by wet grinding, resulting in high powder purity, narrow particle size distribution, good flowability, and strong stability.
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The silicon carbide powder for silicon carbide ceramic raw materials produced by JNDE NEW MATERIAL Company is made using a patented technology. It employs a special selection method to extract α-silicon carbide crystals from silicon carbide crystals, resulting in high-density polycrystalline silicon carbide. The raw materials are produced from silicon carbide crystal segments that have been smelted at temperatures above 2200 degrees for extended periods. The original powder density is above 1.6-1.8g/cm3, with a purity of over 99.9%. This allows the density of pressureless sintered silicon carbide ceramics to reach over 3.16g/cm3, achieving and exceeding the quality of international silicon carbide powders.

Silicon carbide for pressureless sintering is produced by grinding with a wet grinder, resulting in high purity powder with a narrow particle size distribution, good flowability, and strong stability.
The products produced have high density, high hardness, wear resistance, and corrosion resistance, and are widely used in fields such as seals, bulletproof equipment, heating plates, pumps and valves, new energy, and scientific research in national defense and military.

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